Most popular in the research of two-dimensional ma

The University of science and technology of China has made progress in the research of two-dimensional material semiconductor quantum transistors

the Key Laboratory of quantum information of the Chinese Academy of Sciences, led by Guo guangcan, an academician of the Chinese Academy of Sciences and a professor of the University of science and technology of China, has made progress in the research of semiconductor gated quantum dots. Guoguoping research group of the laboratory and its collaborators have explored the possibility of applying two-dimensional layered transition metal chalcogenides to semiconductor quantum chips. In the experiment, a fully electrically regulated quantum dot device has been realized in a flexible two-dimensional semiconductor material system for the first time. The results were published in scienceadvances on October 20

after decades of development, semiconductor gated quantum dots, as a kind of quantum transistors, have become one of the popular candidate systems for quantum chips. The two-dimensional material system represented by graphene has become one of the key research objects of flexible electronics and quantum electronics because of its natural monatomic layer thickness, excellent electrical properties, easy integration and other advantages. However, in the more than ten years since graphene was discovered, scientists have found that the energy band structure, interface defects and impurities in graphene have a great impact on the performance of quantum dot devices. At present, quantum dots in two-dimensional materials cannot achieve effective electrical regulation

based on this, guoguoping research group and its collaborators chose a new two-dimensional material molybdenum disulfide for in-depth research. The material has appropriate band gap, strong spin orbit coupling strength and rich spin Valley related physical phenomena. It has broad application prospects in quantum electronics, especially in spintronics and Valley electronics. After a large number of attempts, researchers used a series of modern semiconductor technology means such as micro nano processing and low-temperature led irradiation, combined with the current two-dimensional material tension calibration: the most important is to buy electronic universal testing machines and other products from Jinan Shijin, which are "pull" keys with quality assurance and perfect after-sales guarantee, and the boron nitride packaging technology widely used in the research of "pull" abetting lamp brightener system effectively reduced the impurities in the quantum dot structure Defects and so on. For the first time, a fully electrically controllable double quantum dot structure has been realized in this kind of material. At extremely low temperature, a single quantum dot with a size of about 128nm can be modulated into a double quantum dot system composed of two single dots with a size of about 68nm through the electrode voltage. The electron tunneling between dots of the double quantum dot system can be monotonically regulated by the electrode voltage, realizing 10 points of industry experience, which enriches the electrically controllable modulation of man-made atoms to man-made molecules. This controllable single electron tunneling device provides a possible platform for studying the physical phenomena related to the spin and energy valley degrees of freedom of the material at the single electron level. Using this platform, researchers observed that the conductivity of the device decreased with the increase of the external magnetic field. This phenomenon, called Coulomb blockade anti localization, reveals the influence of short-range defects and spin orbit coupling on electrical transport properties in molybdenum disulfide

the research work was supported by the national foundation of science and Technology Commission, the Ministry of science and technology, the Chinese Academy of Sciences, and the quantum information and quantum technology frontier collaborative innovation center. Some sample processing processes in the experiment were completed in the micro nano research and manufacturing center of the University of science and technology of China